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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4924 DESCRIPTION *High Breakdown Voltage: V(BR)CBO= 1500V(Min) *High Switching Speed *High Reliability APPLICATIONS *Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww 1500 scs .i UNIT V 800 V 6 V 10 A 25 A 3.0 W .cn mi e ICP Collector Current-Peak Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 70 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4924 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 A ICEO Collector Cutoff Current VCE= 1500V ; RBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC current gain hFE-2 DC current gain Switching times tstg Storage Time w w scs .i w IC= 1A ; VCE= 5V IC= 8A ; VCE= 5V .cn mi e 8 4 1.0 mA 8 3.0 s IC= 6A , IB1= 1.2A; IB2= -2.4A RL= 33.3; VCC= 200V 0.2 s tf Fall Time isc Websitewww.iscsemi.cn 2 |
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